RF Semiconductors, RF Solid State Amplifiers and Wide Bandgap Materials Program

The Office of Naval Research (ONR) RF Semiconductor Devices, RF Solid State Amplifiers and Wide Bandgap Materials Program's objective is to develop solid state (e.g., wide bandgap semiconductor) low noise, high speed,  and power devices and circuits for use in surveillance, electronic warfare, multifunctional RF systems communications, and power applications. Emphasis is on device advancements that enable a significant improvement in broadband performance, high linearity, and/or high (e.g., 60%) power added efficiency. Power output of at least 5 times that of GaAs-based devices. Emerging applications for wide bandgap materials and devices in the areas of transmitter and receiver components, mixed signal and digital circuits are also included.

The program investigates electronic properties of wide bandgap, III-V and silicon-based semiconductors and novel devices; focusing on novel high power microwave and switching devices for broadband radar, electronic warfare, communications, and multifunctional systems applications and for power control applications.